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| STGW30NC60WD N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESHTM IGBT Features Type STGW30NC60WD VCES 600V VCE(sat)Max @25C < 2.5V IC @100C 30A High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "W" identifies a family optimized for very high frequency application. Figure 1. Internal schematic diagram Applications High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies Table 1. Device summary Marking GW30NC60WD Package TO-247 Packaging Tube Order code STGW30NC60WD July 2007 Rev 4 1/14 www.st.com 14 Contents STGW30NC60WD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/14 STGW30NC60WD Electrical ratings 1 Electrical ratings Table 2. Symbol VCES IC IC ICM(1) VGE PTOT Tstg Tj TL Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at 25C Collector current (continuous) at 100C Collector current (pulsed) Gate-emitter voltage Total dissipation at TC = 25C Storage temperature - 55 to 150 Operating junction temperature Maximum lead temperature for soldering purpose (1.6mm from case, for 10 sec.) 300 C C Value 600 60 30 200 20 200 Unit V A A A V W 1. Pulse width limited by max junction temperature Table 3. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case Thermal resistance junction-ambient Min. Typ. Max. Unit 0.625 C/W 62.5 C/W 3/14 Electrical characteristics STGW30NC60WD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol VBR(CES) VCE(SAT) VGE(th) ICES IGES gfs Static electrical characteristics Parameter Collector-emitter breakdown voltage Test conditions IC = 1mA, VGE = 0 Min. 600 2.1 1.8 3.75 2.5 Typ. Max. Unit V V V V A mA nA S Collector-emitter saturation VGE=15V, IC= 20A, Tj= 25C voltage VGE=15V, IC= 20A,Tj= 125C Gate threshold voltage Collector-emitter leakage current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250A VCE = Max Rating,Tc=25C VCE = Max Rating, Tc=125C VGE = 20V, VCE = 0 VCE = 15V, IC= 20A 5.75 10 1 100 15 Table 5. Symbol Cies Coes Cres Qg Qge Qgc ICL Dynamic electrical characteristics Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Turn-Off SOA minimum current Test conditions Min. Typ. 2080 175 52 102 17.5 47 200 140 Max. Unit pF pF pF nC nC nC A VCE = 25V, f = 1MHz, VGE=0 VCE = 390V, IC = 20A, VGE = 15V, (see Figure 17) Vclamp = 480V , Tj = 150C RG = 10, VGE= 15V 4/14 STGW30NC60WD Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390V, IC = 20A , RG= 10 VGE= 15V, TJ= 25C (see Figure 17) VCC = 390V, IC = 20A , RG= 10 VGE= 15V, TJ= 125C (see Figure 17) Vcc = 390V, IC = 20A, RGE = 10 , VGE=15V,TJ=25C (see Figure 19) Vcc = 390V, IC = 20A, , RGE=10 VGE =15V, TJ=125C (see Figure 19) Min. Typ. 29.5 12 1640 29 13.5 1600 19.5 118 27 Max. Unit ns ns A/s ns ns A/s ns ns ns Off voltage rise time Turn-off delay time Current fall time 46 151 38 ns ns ns Table 7. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 20A , RG= 10 VGE= 15V, Tj= 25C (see Figure 19) VCC = 390V, IC = 20A , RG= 10 VGE= 15V, Tj= 125C (see Figure 19) Min. Typ. 305 181 486 455 355 801 Max. Unit J J J J J J 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics STGW30NC60WD Table 8. Symbol Vf trr Qrr Irrm S trr Qrr Irrm S Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Softness factor of the diode Reverse recovery time Reverse recovery charge Reverse recovery current Softness factor of the diode Test conditions If = 10A If = 10A, Tj = 125C If = 20A, VR = 50V, di/dt=100A/s, Tj=25C (see Figure 20) Min. Typ. 1.5 1.1 44 66 3 0.375 88 237 5.4 0.57 Max. 2 Unit V V ns nC A If = 20A, VR = 50V, di/dt=100A/s, Tj=125C (see Figure 20) ns nC A 6/14 STGW30NC60WD Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations 7/14 Electrical characteristics Figure 8. Normalized gate threshold voltage vs temperature Figure 9. STGW30NC60WD Collector-emitter on voltage vs collector current Figure 10. Normalized breakdown voltage vs temperature Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14 STGW30NC60WD Figure 14. Thermal impedance Electrical characteristics Figure 15. Turn-off SOA Figure 16. Emitter-collector diode characteristics 9/14 Test circuit STGW30NC60WD 3 Test circuit Figure 18. Gate charge test circuit Figure 17. Test circuit for inductive load switching Figure 19. Switching waveform Figure 20. Diode recovery time waveform 10/14 STGW30NC60WD Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGW30NC60WD TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/14 STGW30NC60WD Revision history 5 Revision history Table 9. Date 21-Nov-2005 29-Nov-2005 06-Mar-2006 12-Jul-2007 Revision history Revision 1 2 3 4 Initial release. Modified Figure 5 and Figure 6 New template Corrected Figure 11, Figure 12, Figure 13 Changes 13/14 STGW30NC60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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